Improved thermal management for GaN power electronics: Silver diamond composite packages

نویسندگان

  • Mustapha Faqir
  • T. Batten
  • T. Mrotzek
  • S. Knippscheer
  • M. Massiot
  • M. Buchta
  • Hervé Blanck
  • S. Rochette
  • Olivier Vendier
  • Martin Kuball
چکیده

A novel packaging solution for GaN power electronics for efficient heat extraction in high power devices is presented. The benefits of using silver diamond composites as base plate in packages for GaN power bars are demonstrated. Micro-Raman thermography measurements were carried out to probe the device temperature for devices mounted on different base plates, silver diamond composites and standard CuW, at a range of operating power levels. A significant improvement in terms of thermal management, achieving a reduction in GaN power electronics temperature by up to a factor of two, was obtained when using silver diamond composites base plates with respect to the existing packaging technologies such as of CuW. Bare silver diamond and Cu-plated silver diamond base plates were compared. The influence of die attach to the base plates on thermal performance of GaN power electronics is also discussed. Finite element thermal model was built to correlate to the experiments, and good agreement was achieved. 2012 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Novel packaging solutions for GaN power electronics: Silver-diamond composite packages

We present a new packaging solution for GaN power electronics for efficient heat extraction needed for high power devices. The benefits of using silver diamond composite as base plate in packages for GaN power bars is demonstrated. A dramatic improvement in thermal management (as high as ~50%) was obtained with respect to the existing packaging technologies based on CuW. Micro-Raman thermograph...

متن کامل

Near-junction Thermal Management: Thermal Conduction in Gallium Nitride Composite Substrates

The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak amplification power density of these devices is limited by heat transfer at the device, substrate, package, and system levels. Thermal resistances within micrometers of the transistor junction can limit efficient heat spread...

متن کامل

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

High-power operation of AlGaN/GaN high-electronmobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at Ga...

متن کامل

Direct Low - Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High - Power Electronics

make GaN a superior material to Si and GaAs for the hightemperature high-power electronic devices, ultrahigh power switches, and microwave-power sources. [ 3 ] However, self-heating limits the performance of GaN devices and further development of GaN technology. [ 4 , 5 ] The temperature rise in high-power AlGaN/GaN heterostructure fi eld-effect transistors (HFETs), which is currently on order ...

متن کامل

Thermal Characterization of Composite GaN Substrates for HEMT Applications

High-power operation of AlGaN/GaN highelectron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity substrates such as SiC and diamond are promising, but these composite substrates require careful attention to thermal resistances at GaN-substrate interfaces. We report on thermal characterization of GaN-o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Reliability

دوره 52  شماره 

صفحات  -

تاریخ انتشار 2012